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SRFET
AO4928 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
TM
General Description
The AO4928 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further. Standard Product AO4928 is Pb-free (meets ROHS & Sony 259 specifications). AO4928L is a Green Product ordering option. AO4928L and AO4928 are electrically identical. SOIC-8
Features
FET1 VDS (V) = 30V ID = 9A RDS(ON) < 16m RDS(ON) < 19.5m FET2 V DS(V) = 30V I D=7.3A (V GS = 10V) <24m (V GS = 10V) <29m (V GS = 4.5V)
UIS TESTED! Rg,Ciss,Coss,Crss Tested
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Absolute Maximum Ratings TA=25C unless otherwise noted Symbol Max FET1 Parameter VDS 30 Drain-Source Voltage VGS Gate-Source Voltage 12 Continuous Drain Current A Pulsed Drain Current B Avalanche Current
C C
Max FET2 30 12 7.3 5.9 40 12 22 2.0 1.3 -55 to 150
Units V V A
TA=25C TA=70C IDSM IDM IAR EAR PDSM TJ, TSTG TA=25C
9.0 7.2 40 16 38 2.0 1.3 -55 to 150
A mJ W C
Repetitive avalanche energy L=0.3mH Power Dissipation TA=70C
Junction and Storage Temperature Range Thermal Characteristics FET1 Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A C Maximum Junction-to-Lead Thermal Characteristics FET2 Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 48 74 32
Max 62.5 90 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4928
FET1 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=7A Forward Transconductance VDS=5V, ID=9A IS=1A,V GS=0V Diode Forward Voltage Maximum Body-Diode + Schottky Continuous Current Conditions ID=250A, VGS=0V VDS=24V, V GS=0V TJ=125C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9A TJ=125C 1.5 40 13.2 20.5 15.7 64 0.4 0.6 4.5 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 224 92 1.6 24.0 VGS=10V, V DS=15V, ID=9A 12.0 3.9 4.2 5.5 VGS=10V, V DS=15V, R L=1.7, RGEN=3 IF=9A, dI/dt=300A/s IF=9A, dI/dt=300A/s 4.7 24.0 4.0 10 6.8 13 3 31 nC nC nC ns ns ns ns ns nC 1885 16 25.6 19.5 1.85 Min 30 0.01 5 0.1 10 0.1 2.4 Typ Max Units V mA A V A m m S V A pF pF pF
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of RJA is measured with the device in a still air environment with TA =25C. The power dissipation PDSM and current rating IDSM are based on TJ(MAX)=150C, using t 10s junction-to-ambient thermal resistance. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. Rev0:Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4928
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 80 60 ID (A) ID(A) 15 10 20 0 0 1 2 3 4 5 VDS (Volts) PARAMETERS Figure 1: On-Region Characteristics 2 Normalized On-Resistance VGS=4.5V 1.8 1.6 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 30 60 90 120 150 180 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 45 40 35 RDS(ON) (m) IS (A) 30 25 20 15 10 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 125C ID=9A 1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 25C 125C Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V ID=7A ID=9A VGS=10V VGS=3V 5 0 1 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 125 40 3.5V 10V 4.5V 6V 4V 30 25 20 VDS=5V
25C
DYNAMIC
20
17 RDS(ON) (m)
14
11
VGS=10V
8
Alpha & Omega Semiconductor, Ltd.
AO4928
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 6 4 2 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics Capacitance (pF) VGS (Volts) VDS=15V ID=9A 2500 2000 1500 1000 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss
Ciss
DYNAMIC PARAMETERS
100.00
10s RDS(ON) limited 10s TJ(Max)=150C TA=25C DC 100 1ms Power (W) 1s
50 40 30 20 10 TJ(Max)=175C TC=25C
10.00 ID (Amps)
1.00
0.10
0.01 0.01
0.1
1 VDS (Volts)
10
100
0 0.0001
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.001
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W 0.001 0.01 0.1 1 PD Ton T 100 1000
0.01 Single Pulse 0.001 0.00001 0.0001
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
AO4928
FET1 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01 1.0E-02 VDS=24V 1.0E-03 IR (A) VSD(V) VDS=12V 1.0E-04 1.0E-05 1.0E-06 100 150 200 Temperature (C) Figure 12: Diode PARAMETERS Reverse Leakage Current vs. Junction Temperature 12 di/dt=800A/us 125C 10 8 trr (ns) Irm (A) 25C Qrr Irm 5 0 0 5 10 15 20 25 30 125C 25C 6 4 2 0 12 10 8 trr 6 4 2 0 0 5 10 15 S 25C 20 25 30 25C di/dt=800A/us 125C 0 50 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 100 150 200 Temperature (C) Figure 13: Diode Forward voltage vs. Junction Temperature 3 2.5 2 1.5 1 0.5 0 50 IS=1A 10A 5A 20A
DYNAMIC
30 25 20 Qrr (nC) 15 10
125C
Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25 20 15 10 5 0 0 Qrr Irm 200 400 600 800 10 8 125C trr (ns) 25C 125 Irm (A) 6 4 2 0 1000 15
Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current
2.5 125C Is=20A 2 25C 1.5 trr 25C 125C 1 0.5 0 1000 S
Is=20A
12 9 6 3 0 0 200 400 600 800
Qrr (nC)
25C
S
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
S
AO4928
FET2 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, V DS=5V VGS=10V, I D=7.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4.5V, I D=6A VGS=2.5V, I D=5.5A gFS VSD IS Forward Transconductance VDS=5V, ID=7.3A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 0.7 40 20 30.0 23.4 35.4 26 0.71 1 4.5 900 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 88 65 0.95 10 VGS=4.5V, V DS=15V, I D=7.3A 1.8 3.75 3.2 VGS=10V, VDS=15V, RL=2.1, RGEN=6 IF=7.3A, dI/dt=100A/s IF=7.3A, dI/dt=100A/s 3.5 21.5 2.7 16.8 8 1.5 1100 24 36 29 48 1 Min 30 1 5 100 1.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0 : Sept 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4928
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60 50 40 ID (A) 30 2.5V 20 10 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 30 Normalized On-Resistance 1.8 ID=6A VGS=4.5V VGS=2V 10V 4.5V 3V ID(A) 16 12 125C 8 25C 4 0 0 0.5 1 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics VDS=5V 20
1.5
RDS(ON) (m)
25
VGS=4.5V
1.2
20
VGS=10V ID=7.3A
VGS=10V
0.9
15 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
60 55 50 45 RDS(ON) (m) 35 125C IS (A) 40 ID=7.3A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 125C
1.0E-03 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 25C 25 1.0E-04 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 1.0E-05 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25C 15 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1.0E-06 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4928
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 200 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 1400 VDS=15V ID=7.3A Capacitance (pF) 1200 1000 800 600 400 Crss Coss Ciss
100.00 10s 10.00 ID (Amps) 100s Power (W) RDS(ON) limited 10s DC TJ(Max)=150C TA=25C 0.1 1 VDS (Volts) 10 100 1ms 1s
50 40 30 20 10 0
0.0001 0.001 0.01 0.1 1
TJ(Max)=150C TA=25C
1.00
0.10
0.01 0.01
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1
on
PD THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL D=T /T
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS=T +PNOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.01 TJ,PK ARE DM.ZJA.RJA A Ton OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, RJA=90C/W T Single Pulse FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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